Micro and Nano Technologies and Systems

The group forms with the CeRMiN, the UCL Research center for micro- and nano-scopic materials and electronics devices a multidisciplinary team, involving both silicon device physicists, technologists and experimentalists, as well as circuit designers. It gathers about 50 members, out of which 5 professors and more than 36 Ph.D. students and researchers.

Principal Investigators : Denis Flandre, Laurent Francis, Isabelle Huynen, Sorin Melinte, Jean-Pierre Raskin

Research Labs : SOI Group, Sensors, Microsystems and Actuators Laboratory of Louvain (SMALL)

Nano    Nanoparticles   IEEE Sensors Journal

Nanoparticles for smart electronics

This activity covers the characterization up to 110 GHz, of bulk and nanocomposite materials in various states: solids, foams, liquids, powders, gels, films, … The models created using these measurements allow to extend the range of application of nanostructures, and to develop new sensors and signal processing devices. Of current interest are ferromagnetic nanowires for tunable electronics, carbonated nanoparticles (carbon nanotubes, graphene) for intelligent packaging (EMI shielding, ESD protection, photovoltaic), and nanoporous thin film membranes for fuel cell applications.

Molecular opto-electronics and plasmonics

Our current projects aim at understanding the fundamental nanoscience of man-made quantum structures, namely semiconductor nanodevices and hybrid inorganic-organic platforms for molecular opto-electronics and plasmonics. In particular, we use high-resolution nanolithography as well as soft-lithography and bottom-up fabrication techniques to engineer smart nano- and microsystems. Recently, our group started the development of cutting-edge instrumentation in the area of scanning tunneling spectroscopy and near-field experimental setups based on photon detection.

SOI CMOS technology

ICTEAM has been active in Silicon-on-Insulator (SOI) technology since 1986. Silicon-on-Insulator (SOI) has been a major theme of R&D for more than 20 years, leading to significant contributions with regards to e.g. double-gate MOSFETs, nanowires, high-temperature SOI CMOS, microwaves and millimeter-waves SOI MOSFETs and substrate, Ultra-Low-Power smart sensors (including biosensors) in terms of processing, characterization, simulation, modeling and design.


Bulk and surface micromachining sensors for chemical, medical and harsh environments applications. The group members are focused on varied devices design and fabrication of MEMS and NEMS structures co-integrated with SOI CMOS circuits: design and fabrication of NEMS-based lab-on-chip to characterize the electromechanical properties of materials at nanometer scale, nanowires gas sensors, nanoporous silicon membranes, magnetometers, flow, humidity, pressure and inertial sensors, surface acoustic wave device, etc.

Research infrastructure

Winfab is equipped with a complete pilot fabrication line on silicon/SOI substrates of about 1,000 m² for the rapid prototyping and validation of new fabrication steps and of new integrated devices or microsystems.

Electrical measurement set-ups available in Welcome cover a large range of frequencies (from DC up to 110 GHz) and temperatures (from few mK up to 400°C) on wafer-scale as well as packaged circuits levels. Physical (e.g. interface or thin layer properties) and mechanical (adhesion, stress...) characterization are widely available in the CeRMiN environment.

Simulation tools include industry-standard softwares for integrated processes and devices. Device irradiation is available at the nearby cyclotron research centre on a bench qualified by ESA. The wide research results have been honoured by more than 50 invited presentations in international and national conferences, as well as by several awards.

Most recent publications

Below are listed the 10 most recent journal articles and conference papers produced in this research area.
You also can access all publications by following this link : see all publications.


NANO journal

Journal Articles

1. Trevisoli, Renan; de Souza, Michelly; Trevisoli Doria, Rodrigo; Kilchytska, Valeriya; Flandre, Denis; Pavanello, Marcelo Antonio. Junctionless nanowire transistors operation at temperatures down to 4.2 K. In: Semiconductor Science and Technology, Vol. 31, no.11, p. 114001 (16/10/2016). doi:10.1088/0268-1242/31/11/114001. http://hdl.handle.net/2078.1/181126

2. Amor, Sedki; André, Nicolas; Gérard, Pierre; Ali, S.Z.; Udrea, F.; Tounsi, F.; Mezghani, B.; Francis, laurent; Flandre, Denis. Reliable characteristics and stabilization of on-membrane SOI MOSFET-based components heated up to 335 °C. In: Semiconductor Science and Technology, Vol. 32, no.1, p. 9 (19/12/2016). doi:10.1088/1361-6641/32/1/014001. http://hdl.handle.net/2078.1/181119

3. Pereira, A.S.N.; de Streel, Guerric; Planes, N.; Haond, M.; Giacomini, R.; Flandre, Denis; Kilchytska, Valeriya. An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models. In: Solid-State Electronics, Vol. 128, p. 67-71 (15/10/2016). doi:10.1016/j.sse.2016.10.017. http://hdl.handle.net/2078.1/181095

4. Pavanello, M.A.; de Souza, M.; Ribeiro, T.A.; Martino, J.A.; Flandre, Denis. Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature. In: Semiconductor Science and Technology, Vol. 31, no.11, p. 114005 (20/10/2016). doi:10.1088/0268-1242/31/11/114005. http://hdl.handle.net/2078.1/178174

5. Borrego, C.; Costa, A.M.; Amorin, M.; Coutinho, M.; Karatsas, K.; Sioumis, Th.; Katsifarakis, N.; Konstantinidis, K.; De Vito, S.; Esposito, E.; Smith, P.; André, Nicolas; Gérard, Pierre; Francis, Laurent; Castell, N.; Schneider, P.; Viana, M.; Minguillon, M.C.; Reimringer, W.; Otjes, R.P.; Sicard, O.v.; Pohle, R.; Elen, B.; Suriano, D.; Pfister, V.; Prato, M.; Dipinto, S.; Penza, M. Assessment of air quality microsensors versus reference methods: The EuNetAir joint exercise. In: Atmospheric Environment, p. 29. doi:10.1016/j.atmosenv.2016.09.050 (Accepté/Sous presse). http://hdl.handle.net/2078.1/177116

6. Kotipalli, Raja Venkata Ratan; Descamps, P.; Delamare, Romain; Kaiser, V.; Beaucarne, G.; Flandre, Denis. Electronic properties of negatively charged SiOx films deposited by Atmospheric Pressure Plasma Liquid Deposition for surface passivation of p-type c-Si solar cells. In: Thin Solid Films, Vol. 611, p. 74-77 (12/05/2016). doi:10.1016/j.tsf.2016.05.016. http://hdl.handle.net/2078.1/174799

7. Francis, Laurent. Combined surface acoustic wave and surface plasmon measurement of collagen and fibrinogen layer physical properties. In: Sensing and Bio-Sensing Research, , p. 11 (2016). doi:10.1016/j.sbsr.2016.05.007 (Accepté/Sous presse). http://hdl.handle.net/2078.1/174584

8. Dutu, Constantin Augustin; Vlad, Alexandru; Roda Neve, Cesar; Avram, Ionel; Sandu, Georgiana; Raskin, Jean-Pierre; Melinte, Sorin. Surveying colloid sedimentation by coplanar waveguides. In: Nanotechnology, Vol. 27, p. 225502-225506 (2016). doi:10.1088/0957-4484/27/22/225502. http://hdl.handle.net/2078.1/173668

9. Couniot, Numa; Afzalian, Aryan; Van Overstraeten, Nancy; Francis, Laurent; Flandre, Denis. Capacitive biosensing of bacterial cells: sensitivity optimization. In: IEEE Sensors Journal, Vol. 16, no. 3, p. 11 pages (03/02/2016). doi:10.1109/JSEN.2015.2485120. http://hdl.handle.net/2078.1/170199

10. El Fissi, Lamia; Vandormael, Denis; Houssiau, Laurent; Francis, Laurent. Surface functionalization of cyclic olefin copolymer (COC) with evaporated TiO2 thin film. In: Applied Surface Science, Vol. 363, p. 670-675 (11/12/2015). doi:10.1016/j.apsusc.2015.11.234. http://hdl.handle.net/2078.1/176063

NANO conf

Conference Papers

1. Haddad, Pierre-Antoine; Raskin, Jean-Pierre; Flandre, Denis. Efficient passive energy harvesters at 950 MHz and 2.45 GHz for 100 μW applications in 65 nm CMOS. 2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS) (Monte Carlo (Monaco), du 11/12/2016 au 14/12/2016). http://hdl.handle.net/2078.1/182364

2. de Souza, Michelly; Pavanello, Marcelo Antonio; Flandre, Denis. Low power highly linear temperature sensor based on SOI lateral PIN diodes. 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (Burlingame (USA), du 10/10/2016 au 13/10/2016). http://hdl.handle.net/2078.1/181123

3. Sun, Yan; Rastawicky, Dominik; Liu, Yang; Mar, Warren; Manoharan, Hari; Miglio, Anna; Melinte, Sorin; Charlier, Jean-Christophe; Rignanese, Gian-Marco; He, Lianhua; Liu, Fang; Zhou, Aihui. Isotope-Resolved and Charge-Sensitive Force Imaging Using Scanned Single Molecules. American Physical Society (APS) March Meeting 2016 (Baltimore (USA), du 14/03/2016 au 18/03/2016). http://hdl.handle.net/2078.1/179074

4. Sandu, Georgiana; Kassa, Hailu G.; Avram, Ionel; Gohy, Jean-François; Leclere, Philippe; Vlad, Alexandru; Melinte, Sorin. Si-based three-dimensional assembly for lithium-ion batteries. E-MRS Spring Meeting (Lille (France), du 02/05/2016 au 06/05/2016). http://hdl.handle.net/2078.1/179073

5. Dutu, Constantin Augustin; Vlad, Alexandru; Roda Neve, Cesar; Avram, Ionel; Sandu, Georgiana; Raskin, Jean-Pierre; Melinte, Sorin. Coplanar waveguide devices: Surveying nanocolloid dynamics. E-MRS Spring Meeting (Lille (France), du 02/05/2016 au 06/05/2016). http://hdl.handle.net/2078.1/179069

6. Assalti, R.; Doria, R.T.; Pavanello, M.A.; de Souza, M.; Flandre, Denis. Low-frequency noise in asymmetric self-cascode FD SOI. 31st Symposium on Microelectronics and Devices (SBMicro 2016) (Sao Paulo (Brazil), du 29/08/2016 au 03/09/2016). http://hdl.handle.net/2078.1/178172

7. Peruzzi, Vinicius Vono; Renaux, Christian; Flandre, Denis; Gimenez, Salvador Pinillos. Boosting the MOSFETs matching by using diamond layout style. 31st Symposium on Microelectronics Technology and Devices (SBMicro) (Salvador (Brazil), du 29/08/2016 au 04/09/2016). http://hdl.handle.net/2078.1/178076

8. Molto, A.R.; Doria, R.T.; de Souza, M.; Flandre, Denis; Pavanello, M.A.. Low-frequency noise of submicron graded-channel SOI nMOSFETs at high temperature. 31st Symposium on Microelectronics Technology and Devices (SBMicro) (Salvador (Brazil), du 29/08/2016 au 03/09/2016). http://hdl.handle.net/2078.1/178070

9. Al Kadi Jazairli, Mohamad; André, Nicolas; Tooten, Ester; Olbrechts, Benoit; Raskin, Jean-Pierre; Flandre, Denis. Ultra-low-power 130nm SOI CMOS smart sensor for in-situ mechanical stress in SiP and SoC applications. 14th International Conference Reliability and Stress-Related Phenomena in Nanoelectronics - Experiment and Simulation (IRSP 2016) (Bad Schandau (Germany), du 30/05/2016 au 01/06/2016). http://hdl.handle.net/2078.1/176010

10. André, Nicolas; Li, Guoli; Pollissard-Quatremère, Guillaume; Couniot, Numa; Gérard, Pierre; Ali, Z.; Udrea, Fernando; Zeng, Y.; Francis, Laurent; Flandre, Denis. SOI Sensing Platforms for Water Vapour and Light Detection. CMOSET Conference, Session C5 (Montréal (Canada), du 25/05/2016 au 27/05/2016). http://hdl.handle.net/2078.1/176008

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| 19/12/2012 |