All electronics and micro/nano technologies publications

Journal Articles

1. Anna Furberg; Shoaib Azizi; Jan Bieser; Bol, David; Vlad Coroamă; Elina Eriksson; Francesco Fuso-Nerini; Golard, Louis; Mattias Höjer; George Kamiya; Dag Lundén; Nina Lövehagen; Jens Malmodin; Daniel Schien; Göran Finnveden. Guidelines for assessments of the global information and communication technology sector's direct energy use and climate impact: Key aspects and future scenarios. In: Renewable and Sustainable Energy Reviews, Vol. 226, no.1, p. 116176 (2026). doi:10.1016/j.rser.2025.116176. http://hdl.handle.net/2078.1/304644

2. Chen, Qi; Van Brandt, Léopold; Kilchytska, Valeriya; Bestelink, E.; Sporea, R. A.; Flandre, Denis. Low-frequency noise in polysilicon Source-Gated Thin-Film transistors. In: Solid-State Electronics, , p. 109099 (2025). doi:10.1016/j.sse.2025.109099. http://hdl.handle.net/2078.1/299512

3. Klauner, Tom; Roisin, Nicolas; Bonfanti, Ottilie; Sabri Alirezaei, Iman; André, Nicolas; Flandre, Denis. Radiation Degradation and Mitigation of an Ultrathin SOI SPAD Using a Perimeter Gate. In: IEEE Transactions on Electron Devices, Vol. 72, no.4, p. 1844-1850 (2025). doi:10.1109/TED.2025.3543789. http://hdl.handle.net/2078.1/300168

4. Van Brandt, Léopold; Bonnin, Michèle; Banaszeski da Sila, Mauricio; Bolcato, Pascal; Wirth, Gilson I.; Flandre, Denis. Modeling and Predicting Noise-Induced Failure Rates in Ultra-Low-Voltage SRAM Bitcells Affected by Process Variations. In: IEEE Transactions on Circuits and Systems Part 1: Regular Papers, Vol. 72, no.34, p. 989-1002 (2025). doi:10.1109/TCSI.2024.3525387. http://hdl.handle.net/2078.1/299513

5. Nyssens, Lucas; Nabet, Massinissa; Rack, Martin; Bendou, Youssef; Wane, S.; Sombrin, J. B.; Raskin, Jean-Pierre; Lederer, Dimitri. Analysis of Back-Gate Bias Control on EVM Measurements of a Dual-Band Power Amplifier in 22 nm FD-SOI for 5G 28 and 39 GHz Applications. In: IEEE Transactions on Circuits and Systems I, Vol. 72, no. 2, p. 753-762 (2025). doi:10.1109/TCSI.2024.3487636. http://hdl.handle.net/2078.1/296988

6. Zeidi, Najeh; Tounsi, Fares; Raskin, Jean-Pierre; Flandre, Denis. Trap-rich high-resistivity silicon for improved on-chip monolithic transformers characteristics. In: Solid-State Electronics, Vol. 230 (2025). doi:10.1016/j.sse.2025.109261 (Soumis). http://hdl.handle.net/2078.1/306018

7. Long Chen; Zheyi Lu; Yu Song; Runtong Guo; Hongfu Li; Raskin, Jean-Pierre; Flandre, Denis; Yuan Liu; Lei Liao; Li, Guoli. Quantum capacitance impact on low-frequency noise in MoS2 transistors. In: Physical Review Applied, Vol. 23, no.5, p. 054012 (2025). doi:10.1103/PhysRevApplied.23.054012. http://hdl.handle.net/2078.1/306366

8. Gomeniuk Y V; Lytvyn P M; Gomeniuk Y Y; Rudenko T E; Vasin A V; Rusavsky A V; Lysenko V S; Kilchytska, Valeriya; Flandre, Denis; Nazarov A N. Charge transport and charge trapping in polycrystalline ZnO thin films doped by methane: local and integrated analysis. In: Physica Scripta, Vol. 100, no.2, p. / (2025). doi:10.1088/1402-4896/ada4ea. http://hdl.handle.net/2078.1/306388

9. Song Yu; Runtong Guo; Ruohao Hong; Rui He; Xuming Zou; Benjamin Iñiguez; Flandre, Denis; Lei Liao; Li, Guoli. Improving electrical performance and fringe effect in p-type SnOx thin film transistors via Ta incorporation. In: Journal of Semiconductors, Vol. 46, no.9, p. / (2025). doi:10.1088/1674-4926/25010031. http://hdl.handle.net/2078.1/306389

10. Lahaye, Loïc; Roisin, Nicolas; André, Nicolas; Flandre, Denis; Raskin, Jean-Pierre. Design, Fabrication, Modeling and Characterization of a Polyimide-Based Membrane for High Strain Studies in Microfabricated Devices. In: IEEE Transactions on Materials for Electron Devices, Vol. 3, p. 26 - 33 (2025). doi:10.1109/TMAT.2025.3557763. http://hdl.handle.net/2078.1/306386

11. Zeng, Xi; André, Nicolas; Masarweh, Eléonore; Bonfanti, Ottilie; Flandre, Denis. Electromechanical Measurements and Modeling of a High-Performance Small-Area Ultra-Thin SOI MEMS Piezoresistive Pressure Sensor. In: IEEE Transactions on Instrumentation and Measurement, Vol. 74, no.7507509 , p. 1-9 (2025). doi:10.1109/TIM.2025.3566836. http://hdl.handle.net/2078.1/306361

12. Zeidi, Najeh; Tounsi, Fares; Raskin, Jean-Pierre; Flandre, Denis. Vialess non-spiral on-chip stacked transformer on high-resistivity silicon for improved RF power transfer efficiency. In: Microelectronic Engineering, Vol. 302, p. 112424 (2026). doi:10.1016/j.mee.2025.112424 (Soumis). http://hdl.handle.net/2078.1/306810

13. Huang, Yang; Yan, Yiyi; Nabet, Massinissa; Liu, Fanyu; Li, Bo; Li, Binhong; Han, Zhengsheng; Cristoloveanu, Sorin; Raskin, Jean-Pierre. Analysis of anomalous C-V behavior for extracting the traps density in the undoped polysilicon with a double-BOX structure. In: Solid-State Electronics, Vol. 217, no.n/, p. 108946 (2024). http://hdl.handle.net/2078.1/296997

14. Huang, Yang; Liu, Fanyu; Cristoloveanu, Sorin; Ma, Shiqi; Nabet, Massinissa; Yan, Yiyi; Li, Bo; Li, Binhong; Nguyen, Bich-Yen; Han, Zhengsheng; Raskin, Jean-Pierre. C-V characterization of the trap-rich layer in a novel Double-BOX structure. In: Solid-State Electronics, Vol. 218, p. 108951 (2024). http://hdl.handle.net/2078.1/296999

15. Lefebvre, Martin; Bol, David. A nA-Range Area-Efficient Sub-100-ppm/°C Peaking Current Reference Using Forward Body Biasing in 0.11-µm Bulk and 22-nm FD-SOI. In: IEEE Journal of Solid-State Circuits, Vol. 60, no. 2, p. 579-592 (2025). doi:10.1109/jssc.2024.3406423 (Accepté/Sous presse). http://hdl.handle.net/2078.1/288265

16. Hong, Ruohao; He, Penghui; Zhang, Sen; Hong, Xitong; Tian, Qianlei; Liu, Chang; Bu, Tong; Su, Wanhan; Li, Guoli; Flandre, Denis. Compositional Engineering of Cu-Doped SnO Film for Complementary Metal Oxide Semiconductor Technology. In: Nano Letters : a journal dedicated to nanoscience and nanotechnology, Vol. 24, no.4, p. 1176-1183 (2024). doi:10.1021/acs.nanolett3c03953. http://hdl.handle.net/2078.1/287695

17. Kotagama, Virendra; Renz, A. B.; Kilchytska, Valeriya; Flandre, Denis; Qi, Y.; Shah, V. A.; Antoniou, M.; Gammon, P. M. Investigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space Applications. In: Solid State Phenomena, Vol. 362, p. 83-88 (2024). doi:10.4028/p-4px5zX. http://hdl.handle.net/2078.1/300426

18. Lefebvre, Martin; Bol, David. MANTIS: A Mixed-Signal Near-Sensor Convolutional Imager SoC Using Charge-Domain 4b-Weighted 5-to-84-TOPS/W MAC Operations for Feature Extraction and Region-of-Interest Detection. In: IEEE Journal of Solid State Circuits, Vol. 60, no. 3, p. 934-948 (2024). doi:10.1109/JSSC.2024.3484766 (Accepté/Sous presse). http://hdl.handle.net/2078.1/293316

19. Gauthier Roussilhe; Pirson, Thibault; Mathieu Xhonneux; Bol, David. From silicon shield to carbon lock-in? The environmental footprint of electronic components manufacturing in Taiwan (2015–2020). In: Journal of Industrial Ecology, Vol. 28, no.5, p. 1212-1226 (2024). doi:10.1111/jiec.13487. http://hdl.handle.net/2078.1/292186

20. Parion, Jonathan; Scaffidi, Romain; Duerinckx, Filip; Sivaramakrishnan, Hariharsudan; Flandre, Denis; Poortmans, Jef; Vermang, Bart. Comparative study of the interface passivation properties of LiF & Al2O3 using silicon MIS capacitor. In: Applied Physics Letters, Vol. 124, no.14, p. 142901 (2024). doi:10.10363/5.0203484. http://hdl.handle.net/2078.1/286543

21. Masarweh, Eléonore; Arseenko, Mariia; Guaino, Philippe; Flandre, Denis. Membrane-based mechanical characterization of screen-printed inks: Deflection analysis of ink layers on polyimide membranes. In: Applied Research, (2024). doi:10.1002/appl.202300113 SECTIONS. http://hdl.handle.net/2078.1/285599

22. Lefebvre, Martin; Bol, David. A 2.5-nA Area-Efficient Temperature-Independent 176-/82-ppm/°C CMOS-Only Current Reference in 0.11-µm Bulk and 22-nm FD-SOI. In: IEEE Journal of Solid-State Circuits, Vol. 59, no. 11, p. 3752-3766 (November 2024). doi:10.1109/jssc.2024.3402960. http://hdl.handle.net/2078.1/288064

23. Zeng, Xi; Zhukova, Maria; Faniel, Sébastien; Li, Guoli; Flandre, Denis. Properties and Aging of Bottom-Contact CuO/Au Transmission Line Model (TLM) Structures. In: IEEE Transactions on Electron Devices, p. 6254-6260 (2024). http://hdl.handle.net/2078.1/290715

24. Golard, Louis; Dethienne, Robin; Louveaux, Jérôme; Bol, David. A parametric life-cycle model for assessing environmental impacts of 4G and 5G cellular base stations. In: The International Journal of Life Cycle Assessment, (2024). (Soumis). http://hdl.handle.net/2078.1/295274

25. Cardinael, Pieter; Yadav, Sachin; Parvais, Bertrand; Raskin, Jean-Pierre. Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates. In: IEEE Journal of the Electron Devices Society, Vol. 12, p. 322-330 (2024). doi:10.1109/JEDS.2024.3386170. http://hdl.handle.net/2078.1/286795

26. Cardinael, Pieter; Yadav, Sachin; Hahn, Herwig; Zhao, Ming; Banerjee, Sourish; Kazemi Esfeh, Babak; Mauder, Christof; O'Sullivan, Barry; Peralagu, Uthayasankaran; Vohra, Anurag; Langer, Robert; Collaert, Nadine; Parvais, Bertrand; Raskin, Jean-Pierre. AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates. In: Applied Physics Letters, Vol. 125, no.7, p. 2103 (2024). doi:10.1063/5.0212145. http://hdl.handle.net/2078.1/290592

27. Cardinael, Pieter; Yadav, Sachin; Rack, Martin; Peralagu, Uthayasankaran; Alian, Alireza; Parvais, Bertrand; Collaert, Nadine; Raskin, Jean-Pierre. Contribution of Substrate Harmonic Distortion to GaN-on-Si RF Switches Linearity. In: IEEE Microwave and Wireless Technology Letters, Vol. 34, no.3, p. 298-301 (2024). doi:10.1109/lmwt.2024.3355148. http://hdl.handle.net/2078.1/285859

28. Sinda Kaziz; Pietro Romano; Giovanni Artale; Giuseppe Rizzo; Fabio Viola; Guido Ala; Flandre, Denis; Tounsi, Fares; Antonino Imburgia. Printed-Board Inductive Loop Topologies Performance for Partial Discharges Detection. In: IEEE Transactions on Industry Applications, Vol. 60, no. 4 (2024). doi:10.1109/TIA.2024.3384134. http://hdl.handle.net/2078.1/286676

29. Bidoul Noemie; Roisin, Nicolas; Flandre, Denis. Tuning the Intrinsic Stochasticity of Resistive Switching in VO2 Microresistors. In: Nano Letters, Vol. 24, no.21, p. 6201–6209 (2024). doi:10.1021/acs.nanolett.4c00184. http://hdl.handle.net/2078.1/306646

30. Long Chen; Liting Liu; Hongfu Li; Xingqiang Liu; Yuan Liu; Raskin, Jean-Pierre; Flandre, Denis; Li, Guoli. Mechanisms of forward current transport in vertical nanoscale devices: insights and applications. In: Nano Express, Vol. 6, no.1, p. / (2024). doi:10.1088/2632-959X/ad9853. http://hdl.handle.net/2078.1/306390

31. Ziabari, S.A.S; Aziz, S.M; Lederer, Dimitri. A Novel High-Performance CMOS VCRO Based on Electrically Doped Nanowire FETs in 10 nm Node. In: Silicon, Vol. 15, no.18, p. 7771-7783 (2023). doi:10.1007/s12633-023-02612-2. http://hdl.handle.net/2078.1/281242

32. Halder, Arka; Nyssens, Lucas; Vanbrabant, Martin; Rack, Martin; Lederer, Dimitri; Kilchytska, Valeriya; Raskin, Jean-Pierre. Impact of High Temperature Up to 175 ∘ C on the DC and RF Performances of 22-nm FD-SOI MOSFETs. In: IEEE Transactions on Electron Devices, , p. 1-6 (2023). doi:10.1109/TED.2023.3303150. http://hdl.handle.net/2078.1/277761

33. Halder, Arka; Nyssens, Lucas; Lederer, Dimitri; Kilchytska, Valeriya; Raskin, Jean-Pierre. Comparison of Heat Sinks in Back-End of Line to reduce Self-Heating in 22FDX® MOSFETs. In: Solid-State Electronics, Vol. 207, p. 108706 (2023). doi:10.1016/j.sse.2023.108706. http://hdl.handle.net/2078.1/277760

34. Yan, Yiyi; Kilchytska, Valeriya; Flandre, Denis; Raskin, Jean-Pierre. Analysis of trap distribution and NBTI degradation in Al2O3/SiO2 dielectric stack. In: Solid State Electronics, Vol. 207, no.207 (2023). doi:10.1016/j.sse.2023.108675. http://hdl.handle.net/2078.1/281622

35. Xu, Chu; Ye, Ran; Zou, Pengxin; Yang, Tianyu; Melinte, Sorin; Wang, Zengbo; Zuo, Chao. Focusing light with a metal film coated patchy particle. In: Optics Express, Vol. 31, no.6, p. 10894 (2023). doi:10.1364/OE.484060. http://hdl.handle.net/2078.1/275350

36. L. Nyssens; Ma, Shiqi; Rack, Martin; Lederer, Dimitri; Raskin, Jean-Pierre. Probe-Dependent Residual Error Analysis for Accurate On-Wafer MOSFET Measurements up to 110 GHz. In: IEEE Journal of the Electron Devices Society, Vol. 11, no.11, p. 650 - 657 (2023). doi:10.1109/JEDS.2023.3284291. http://hdl.handle.net/2078.1/281464

37. Huang, Yang; Yan, Yiyi; Nabet, Massinissa; Liu, Fanyu; Li, Bo; Li, Binhong; Han, Zhengsheng; Nguyen, Bich-Yen; Cristoloveanu, Sorin; Raskin, Jean-Pierre. C-V measurement and modeling of double-BOX Trap-Rich SOI substrate. In: Solid-State Electronics, Vol. 209, p. 108763 (2023). doi:10.1016/j.sse.2023.108763. http://hdl.handle.net/2078.1/278454

38. Nyssens, Lucas; Rack, Martin; Nabet, Massinissa; Schwan, C.; Zhao, Z.; Lhemann, S.; Lederer, Dimitri; Raskin, Jean-Pierre. High-resistivity with PN interface passivation in 22 nm FD-SOI technology for low-loss passives at RF and millimeter-wave frequencies. In: Solid-State Electronics, Vol. 205 (2023). doi:10.1016/j.sse.2023.108656. http://hdl.handle.net/2078.1/275661

39. Roisin, Nicolas; Colla, Marie-Stéphane; Raskin, Jean-Pierre; Flandre, Denis. Raman Strain-Shift Measurements and Prediction from First-Principles in Highly-Strained Silicon. In: Journal of Materials Science: Materials in Electronics, Vol. 34, p. 373 (2023). doi:10.1007/s10854-022-09769-3. http://hdl.handle.net/2078.1/272249

40. Kaziz, Sinda; Hadj Said, Mohamed; Imburgia, Antonino; Maamer, Bilel; Flandre, Denis; Romano, Pietro; Tounsi, Fares. Radiometric Partial Discharge Detection: A Review. In: energies, Vol. 16, no.4, p. 1978 (2023). doi:10.3390/en16041978. http://hdl.handle.net/2078.1/272892

41. Xu, Pengcheng; Flandre, Denis; Bol, David. Analysis and Design of RF Energy-Harvesting Systems with Impedance-Aware Rectifier Sizing. In: IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—II: EXPRESS BRIEFS, Vol. 70, no. 2, p. 367-365 (2023). doi:10.1109/TCSII.2022.3171470 (Accepté/Sous presse). http://hdl.handle.net/2078.1/264155

42. Qaderi, Fatemeh; Rosca, Teodor; Burla, Maurizio; Leuthold, Juerg; Flandre, Denis; Ionescu, Adrian M. Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2. In: Communications Materials, , no.34 (2023). doi:10.1038/s43246-023-00350-x. http://hdl.handle.net/2078.1/283150

43. Xie, Zhengdao; Li, Guoli; Xia, Shengxuan; Liu, Chang; Zhang, Sen; Flandre, Denis. Ultimate Limit in Optoelectronic Performances of Monolayer WSe2 Sloping-Channel Transistors. In: Nano Letters : a journal dedicated to nanoscience and nanotechnology, Vol. 23, p. 6664-6672 (2023). doi:10.1021/acs.nanolett.3c01866. http://hdl.handle.net/2078.1/283147

44. Afzalian, Aryan; Flandre, Denis. Ultra-Scaled Si Nanowire Biosensors for Single DNA Molecule Detection. In: Sensors, Vol. 23, no.12, p. 5405 (2023). doi:10.3390/s23125405. http://hdl.handle.net/2078.1/283148

45. Lefebvre, Martin; Flandre, Denis; Bol, David. A 1.1- / 0.9-nA Temperature-Independent 213- / 565-ppm/°C Self-Biased CMOS-Only Current Reference in 65-nm Bulk and 22-nm FDSOI. In: IEEE Journal of Solid-State Circuits, Vol. 58, no. 8, p. 2239-2251 (August 2023). doi:10.1109/jssc.2023.3240209. http://hdl.handle.net/2078.1/272466

46. Puyol Troisi, Rafael; Walewyns, Thomas; Francis, Laurent; Flandre, Denis. Design of Ultra-Low-Power Sensor Readout Circuits Through Adaptive Biasing for Gas Monitoring With Chemiresistive Sensors. In: IEEE Sensors Journal, Vol. 23, no.22, p. 27468-27477 (2023). doi:10.1109/JSEN.2023.3322393. http://hdl.handle.net/2078.1/283145

47. Vanbrabant, Martin; Raskin, Jean-Pierre; Flandre, Denis; Kilchytska, Valeriya. Impact of thermal coupling effects on the digital and analog figures of merit of UTBB SOI MOSFET pairs. In: Solid - State Circuits, Vol. 2023, p. 108623 (2023). doi:10.1016/j.sse.2023.108623. http://hdl.handle.net/2078.1/283154

48. Golard, Louis; Louveaux, Jérôme; Bol, David. Evaluation and projection of 4G and 5G RAN energy footprints: the case of Belgium for 2020–2025. In: Annales des Télécommunications, Vol. online (2023). doi:10.1007/s12243-022-00932-9. http://hdl.handle.net/2078.1/267972

49. Pirson, Thibault; Delhaye, Thibault P.; Pip, Alex; Le Brun, Grégoire; Raskin, Jean-Pierre; Bol, David. The Environmental Footprint of IC Production: Review, Analysis and Lessons from Historical Trends. In: IEEE Transactions on Semiconductor Manufacturing, Vol. 36, p. 56-67 (2023). doi:10.1109/tsm.2022.3228311. http://hdl.handle.net/2078.1/268615

Patents

1. Kaschten, Vincent; Lederer, Dimitri; Alain Zambon; Craeye, Christophe. Microwave radiation unit and transceiver therewith. http://hdl.handle.net/2078.1/306020 http://hdl.handle.net/2078.1/306020

2. Kaschten, Vincent; Alain Zambon. Microwave Imaging Radar Sensor. http://hdl.handle.net/2078.1/306019 http://hdl.handle.net/2078.1/306019

3. Xu, Pengcheng; Bol, David; Flandre, Denis. Energy harvesting system. http://hdl.handle.net/2078.1/283160 http://hdl.handle.net/2078.1/283160

4. Roisin, Nicolas; Flandre, Denis; André, Nicolas; Delhaye, Thibault. Strain sensor. http://hdl.handle.net/2078.1/283157 http://hdl.handle.net/2078.1/283157

Conference Papers

1. Yadav, Sachin; Rassekh, Amin; Cardinael, Pieter; Banerjee, Sourish; Esfeh, Babak Kazemi; Peralagu, Uthayasankaran; Dehan, Morin; Raskin, Jean-Pierre; Parvais, Bertrand. High Linearity and Low RF Loss GaN-on-Si Substrates Achieved Through Interface Engineering. In: 2025 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). Vol. N.A. no.N.A. p. N.A. (2025). IEEE, 2025 xxx. doi:10.1109/bcicts63111.2025.11211364. http://hdl.handle.net/2078.1/306553

2. Ozturk, Ozberk; Tounsi, Fares; Francis, Laurent; Flandre, Denis; Murat Kaya Yapici. Multiphysics Modeling of a Novel MEMS Accelerometer Based on Electromagnetic Induction. In: 2025 26th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and M. Vol. /, no./, p. / (2025). IEEE, 2025 xxx. doi:10.1109/EuroSimE65125.2025.11006620. http://hdl.handle.net/2078.1/306380

3. Ozturk, Ozberk; Zeidi, Najeh; Tounsi, Fares; Flandre, Denis; Murat Kaya Yapici. Modeling and Lumped-Element Extraction of PCB-Based Laterally Coupled Coplanar Transformers. In: 2025 26th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and M. Vol. /, no./, p. / (2025). IEEE, 2025 xxx. doi:10.1109/EuroSimE65125.2025.11006563. http://hdl.handle.net/2078.1/306385

4. Kotagama, Virendra; Renz, A. B.; Kilchytska, Valeriya; Flandre, Denis; Qi, Y; Shah, V. A.; Antoniou, M.; Gammon, P. M.. Investigations into the impact of P2O5 annealing techniques on the field oxide TID response for 4H-SiC space applications. In: RADECS 2024 (Solid State Phenomena), 2024, p. 83-88 xxx. doi:10.4028/p-4px5zX. http://hdl.handle.net/2078.1/300421

5. Lefebvre, Martin; Bol, David. A Mixed-Signal Near-Sensor Convolutional Imager SoC with Charge-Based 4b-Weighted 5-to-84-TOPS/W MAC Operations for Feature Extraction and Region-of-Interest Detection. In: Proceedings of the 2024 IEEE Custom Integrated Circuits Conference (CICC). p. 1-2. Institute of Electrical and Electronics Engineers (IEEE), 2024 xxx. doi:10.1109/CICC60959.2024.10528961. http://hdl.handle.net/2078.1/287450

6. Nabet, Massinissa; Rack, Martin; Crémer, Sébastien; Paillardet, Frédéric; Cathelin, Andreia; Raskin, Jean-Pierre; Lederer, Dimitri. Sub-6 GHz RF SPDT Switches Designed in an Advanced 28 nm Fully-Depleted Silicon-on-Insulator Technology with a High Resistivity Substrate. In: 2024 19th European Microwave Integrated Circuits Conference (EuMIC), 2024, 978-2-87487-078-1 xxx. doi:10.23919/EuMIC61603.2024.10732828. http://hdl.handle.net/2078/296989

7. Perrosé, Martin; Acosta Alba, Pablo; Reboh, Shay; Lugo, Jose; Plantier, Christophe; Cardinael, Pieter; Rack, Martin; Allibert, Frédéric; Milesi, Frédéric; Garros, Xavier; Raskin, Jean-Pierre. Local Interface RF Passivation Layer Based on Helium Ion-Implantation in High-Resistivity Silicon Substrates. In: Proceedings of the 2024 IEEE/MTT-S International Microwave Symposium (IMS).. Vol. -, no.-, p. 944-947 (2024). IEEE, 2024 xxx. doi:10.1109/IMS40175.2024.10600220. http://hdl.handle.net/2078.1/294906

8. Vanhouche, Benjamin; Cardinael, Pieter; Boakes, Lizzie; Ragnarsson, Lars-Åke; Rolin, Cédric; Raskin, Jean-Pierre; Parvais, Bertrand. Environmental Analysis of RF Substrates. In: 2024 Electronics Goes Green 2024+ (EGG). Vol. -, no.-, p. 1-8 (2024). IEEE, 2024 xxx. doi:10.23919/egg62010.2024.10631181. http://hdl.handle.net/2078.1/294911

9. Golard, Louis; Agram, Youssef; Rottenberg, François; Quitin, François; Bol, David; Louveaux, Jérôme. A Parametric Power Model of Multi-Band Sub-6 GHz Cellular Base Stations Using On-Site Measurements. In: IEEE International Symposium Personal, Indoor and Mobile Radio Communications. (2024). I E E E, 2024 xxx. doi:10.1109/PIMRC59610.2024.10817448. http://hdl.handle.net/2078.1/289070

10. Bidoul Noemie; Pauline Raux; Van Aerschot, Tom; Alex Pip; Renaux, Christian; Faniel, Sébastien; Flandre, Denis; Raskin, Jean-Pierre. Process-Based Life Cycle Assessment of a Vanadium Dioxide Spiking Neuron. In: 2024 Electronics Goes Green 2024+ (EGG), IEEE, 2024, 978-3-00-079330-1 xxx. doi:10.23919/EGG62010.2024.10631188. http://hdl.handle.net/2078.1/306636

11. Bendou, Youssef; Rack, Martin; Lederer, Dimitri; cathelin, Andreia; Raskin, Jean-Pierre. Substrate noise mitigation using high resistivity base silicon wafer for a 14 GHz VCO on 28 nm FD-SOI. In: 2023 21st IEEE Interregional NEWCAS Conference (NEWCAS), 2023, 979-8-3503-0024-6 xxx. doi:10.1109/NEWCAS57931.2023.10198044. http://hdl.handle.net/2078.1/277831

12. Fache, T.; Moulin, Maxime; Charlet, I.; Chalupa, Z.; Raskin, Jean-Pierre; Allibert, F.; Plantier, C.; Gaillard, F.; Hutin, L.. Buried PN junctions impact on the performances of an inductor at RF frequencies. 2023 xxx. http://hdl.handle.net/2078.1/271163

13. L. Nyssens; Rack, Martin; Tuyaerts, Romain; Lederer, Dimitri; Raskin, Jean-Pierre. Verification of Reference Impedance from Common On-Wafer Calibrations on Commercial Calibration Substrates. 2023 xxx. http://hdl.handle.net/2078.1/281468

14. Kaschten, Vincent; Lederer, Dimitri; Craeye, Christophe. Analysis of GRIN Lenses with PEC Elements Using a 2D Cylindrical Electromagnetic Solver. In: 17th European Conference on Antennas and Propagation (EuCAP),, 2023, 978-1-6654-7541-9 xxx. doi:10.23919/EuCAP57121.2023.10133554. http://hdl.handle.net/2078.1/281471

15. Alkhalifeh, Khaldoun; Vanbrabant, Martin; Rack, Martin; Tihon, Denis; Craeye, Christophe; Raskin, Jean-Pierre; Lederer, Dimitri. Combined Thermo-Reflectance and Thin-Film Coating in Near-Field Imaging of Chip-Package-PCB-Antenna Modules for Industrial-Testing and Failure Analysis. In: Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS), 2023, 979-8-3503-3880-5 xxx. http://hdl.handle.net/2078.1/281469

16. Ma, Shiqi; L. Nyssens; Raskin, Jean-Pierre; Lederer, Dimitri. Sub-mmWave Transmission Lines on Silicon-Based Technologies. In: 53rd European Microwave Conference, 2023, 978-2-87487-072-9 xxx. http://hdl.handle.net/2078.1/281467

17. Courte, Quentin; Rack, Martin; Lederer, Dimitri; Raskin, Jean-Pierre. SPST and SPDT 60 GHz Travelling-Wave Switches in 22 nm FD-SOI. In: 18th European Microwave Integrated Circuits Conference (EuMIC), 2023, 978-2-87487-073-6 xxx. http://hdl.handle.net/2078.1/281244

18. Van Ruymbeke, Michel; Toussaint, Sébastien; Wielant, François; Karatekin, Ozgur. The gravimeter "B-grav" for in-situ gravity measurements at the surface of an asteroid. 2023 xxx. http://hdl.handle.net/2078.1/275316

19. Nabet, Massinissa; Rack, Martin; Huet, Benjamin; Tuyaerts, Romain; Scheen, Gilles; Raskin, Jean-Pierre. High Resistivity Trap-Rich Substrate for RF MEMS Switches. In: 2023 Symposium on Design, Test, Integration & Packaging of MEMS/MOEMS (DTIP), 2023, 979-8-3503-4131-7 xxx. doi:10.1109/DTIP58682.2023.10267954. http://hdl.handle.net/2078.1/278826

20. Huang, Yang; Yan, Yiyi; Nabet, Massinissa; Liu, Fanyu; Li, Bo; Li, Binhong; Han, Zhengsheng; Nguyen, Bich-Yen; Cristoloveanu, Sorin; Raskin, Jean-Pierre. C-V Measurement and Modeling of Double-BOX Trap-Rich SOI Substrate. In: 9th Joint Intl EuroSOI Workshop and International Conf On Ultimate Integration on Silicon 2023, 2023 xxx. http://hdl.handle.net/2078.1/275592

21. Francis, Laurent; Roisin, Nicolas; Colla, Marie-Stéphane; Flandre, Denis; Raskin, Jean-Pierre. Improving the determination of strain in the deformed Silicon measured by Raman spectroscopy. In: International Meeting on Optical Measurement Techniques and Industrial Applications, 2023 xxx. http://hdl.handle.net/2078.1/274018

22. Parion, Jonathan; Scaffidi, Romain; Flandre, Denis; Brammertz, Guy; Vermang, Bart. Low-temperature admittance spectroscopy for defect characterization in Cu(In,Ga)(S,Se)2 thin-film solar cells. In: IEEE EUROCON 2023 - 20th International Conference on Smart Technologies, 2023, 978-1-6654-6398-0 xxx. doi:10.1109/EUROCON56442.2023.10199008. http://hdl.handle.net/2078.1/283161

23. Bidoul, Noémie; Rosca, Teodor; Ionescu, Adrian M.; Flandre, Denis. Static and Dynamic Stochastic Analysis of a Temperature-Sensitive VO2 Spiking Neuron. In: 53rd European Solid-State Device Research Conference (ESSDERC), 2023, 979-8-3503-0424-4 xxx. doi:10.1109/ESSDERC59256.2023.10268509. http://hdl.handle.net/2078.1/283155

24. Van Brandt, Léopold; Vercauteren, Roselien; Haya Enriquez, Diego; André, Nicolas; Kilchytska, Valeriya; Flandre, Denis; Delvenne, Jean-Charles. Variance and Skewness of Current Fluctuations Experimentally Evidenced in Single-Photon Avalanche Diodes. In: 2023 International Conference on Noise and Fluctuations (ICNF), 2023, 979-8-3503-3011-3 xxx. doi:10.1109/ICNF57520.2023.10472747. http://hdl.handle.net/2078.1/287699

25. Chouaibi, Sana; Said, Mohammed Hadj; Nasr, Dorra; Ayed, Mossaad Ben; Flandre, Denis; Tounsi, Fares. Mutual Inductance Evaluation Between Two Parallel Conductors on a PCB. In: 30th IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2023, 979-8-3503-2649-9 xxx. doi:10.1109/ICECS58634.2023.10382803. http://hdl.handle.net/2078.1/287694

26. Chen, Qi; Flandre, Denis. TCAD Simulation Study on P-type Source-gated CuO TFTs. 2023 xxx. http://hdl.handle.net/2078.1/281173

27. Bidoul, Noémie; Huet, Benjamin; Ureña Begara, Ferran; Raskin, Jean-Pierre; Flandre, Denis. Tuning the stochasticity of VO2 neurons firing-threshold through grain size engineering. In: Proceedings of Neuromorphic Materials, Devices, Circuits and Systems, 2023, p. 050 xxx. doi:10.29363/nanoge.neumatdecas.2023.050. http://hdl.handle.net/2078.1/272256

28. Chen, Qi; Zeng, Xi; Flandre, Denis. Impact of passivation layer on the subthreshold behavior of p-type CuO accumulation-mode thin-film transistors. 2023 xxx. http://hdl.handle.net/2078.1/281169

29. Perrosé, M.; Acosta Alba, P.; Moulin, Maxime; Augendre, E.; Lugo, J.; Raskin, Jean-Pierre; Reboh, S.. RF figures of merit of polysilicon trap-rich layers formed locally by ion amorphization and nanosecond laser annealing. 2023 xxx. http://hdl.handle.net/2078.1/271162

30. Rack, Martin; L. Nyssens; Q.H. Le; D.K. Huynh; T. Kämpfe; Raskin, Jean-Pierre; Lederer, Dimitri. A Compact 120 GHz LNA in 22 nm FD-SOI with Back-Gate Controllable Variable-Gain. In: 18th European Microwave Integrated Circuits Conference (EuMIC), 2023, 978-2-87487-073-6 xxx. http://hdl.handle.net/2078.1/281465

31. Zeidi, Najeh; Rack, Martin; André, Nicolas; Tounsi, Fares; Raskin, Jean-Pierre; Flandre, Denis. Effect of Silicon Substrate Resistivity on Large- Area High-Voltage Spiral Inductor Performance. In: 2023 Symposium on Design, Test, Integration & Packaging of MEMS and MOEMS, 2023, 979-8-3503-4132-4 xxx. doi:10.1109/DTIP58682.2023.10267935. http://hdl.handle.net/2078.1/281155

32. Scheen, Gilles; Tuyaerts, Romain; Cardinael, Pieter; Ekoga, Enriqué; Aouadi, Khaled; Pavageau, Christophe; Rassekh, Amin; Nabet, Massinissa; Yadav, Sachin; Raskin, Jean-Pierre; Parvais, Bertrand; Emam, Mostafa. GaN-on-Porous Silicon for RF Applications. In: 2023 53rd European Microwave Conference (EuMC). p. 842-845 (2023). 2023 xxx. doi:10.23919/EuMC58039.2023.10290465. http://hdl.handle.net/2078.1/280804

33. Golard, Louis; Bol, David; Louveaux, Jérôme. A Configurable RAN Model to Evaluate and Reduce its Power Consumption and Carbon Footprint. 2023 xxx. http://hdl.handle.net/2078.1/278543

Book Chapters

1. Pirson, Thibault; Le Brun, Grégoire; Ernesto Quisbert-Trujillo; Thomas Ernst; Raskin, Jean-Pierre; Bol, David. Towards Life Cycle Thinking and Judicious Ecodesign for the Internet of Things (IoT) Current Practices and Perspectives. In: Outlooking beyond Nanoelectronics and Nanosystems , Simon Deleonibus: New York, 2024, p. 75-136. 9781003509905. xxx xxx. doi:10.1201/9781003509905. http://hdl.handle.net/2078.1/292137